The following text field will produce suggestions that follow it as you type.

Barnes and Noble

Loading Inventory...
Multi-Gigahertz Nyquist Analog-to-Digital Converters: Architecture and Circuit Innovations Deep-Scaled CMOS FinFET TechnologiesMulti-Gigahertz Nyquist Analog-to-Digital Converters: Architecture and Circuit Innovations Deep-Scaled CMOS FinFET TechnologiesMulti-Gigahertz Nyquist Analog-to-Digital Converters: Architecture and Circuit Innovations Deep-Scaled CMOS FinFET Technologies

Multi-Gigahertz Nyquist Analog-to-Digital Converters: Architecture and Circuit Innovations Deep-Scaled CMOS FinFET Technologies in Chattanooga, TN

By Barnes & Noble

Current price: $109.00
Get it in StoreVisit retailer's website
Multi-Gigahertz Nyquist Analog-to-Digital Converters: Architecture and Circuit Innovations Deep-Scaled CMOS FinFET Technologies

Barnes and Noble

Multi-Gigahertz Nyquist Analog-to-Digital Converters: Architecture and Circuit Innovations Deep-Scaled CMOS FinFET Technologies in Chattanooga, TN

By Barnes & Noble

Current price: $109.00
Loading Inventory...

Size: EBook

This book proposes innovative circuit, architecture, and system solutions in deep-scaled CMOS and FinFET technologies, which address the challenges in maximizing the accuracy*speed/power of multi-GHz sample rate and bandwidth Analog-to-Digital Converters (ADC)s. A new holistic approach is introduced that first identifies the major error sources of a converter’ building blocks, and quantitatively analyzes their impact on the overall performance, establishing the fundamental circuit-imposed accuracy – speed – power limits. The analysis extends to the architecture level, by introducing a mathematical framework to estimate and compare the accuracy – speed – power limits of several ADC architectures and variants. To gain system-level insight, time-interleaving is covered in detail, and a framework is also introduced to compare key metrics of interleaver architectures quantitatively. The impact of technology is also considered by adding process effects from several deep-scaled CMOS technologies. The validity of the introduced analytical approach and the feasibility of the proposed concepts are demonstrated by four silicon prototype Integrated Circuits (IC)s, realized in ultra-deep-scaled CMOS and FinFET technologies. • Introduces a new, holistic approach for the analysis and design of high-performance ADCs in deep-scaled CMOS technologies, from theoretical concepts to silicon bring-up and verification; • Describes novel methods and techniques to push the accuracy – speed – power boundaries of multi-GHz ADCs, analyzing core and peripheral circuits’ trade-offs across the entire ADC chain; • Supports the introduced analysis and design concepts by four state-of-the-art silicon prototype ICs, implemented in 28nm bulk CMOS and 16nm FinFET technologies; • Provides a useful reference and a valuable tool for beginners as well as experienced ADC design engineers.
This book proposes innovative circuit, architecture, and system solutions in deep-scaled CMOS and FinFET technologies, which address the challenges in maximizing the accuracy*speed/power of multi-GHz sample rate and bandwidth Analog-to-Digital Converters (ADC)s. A new holistic approach is introduced that first identifies the major error sources of a converter’ building blocks, and quantitatively analyzes their impact on the overall performance, establishing the fundamental circuit-imposed accuracy – speed – power limits. The analysis extends to the architecture level, by introducing a mathematical framework to estimate and compare the accuracy – speed – power limits of several ADC architectures and variants. To gain system-level insight, time-interleaving is covered in detail, and a framework is also introduced to compare key metrics of interleaver architectures quantitatively. The impact of technology is also considered by adding process effects from several deep-scaled CMOS technologies. The validity of the introduced analytical approach and the feasibility of the proposed concepts are demonstrated by four silicon prototype Integrated Circuits (IC)s, realized in ultra-deep-scaled CMOS and FinFET technologies. • Introduces a new, holistic approach for the analysis and design of high-performance ADCs in deep-scaled CMOS technologies, from theoretical concepts to silicon bring-up and verification; • Describes novel methods and techniques to push the accuracy – speed – power boundaries of multi-GHz ADCs, analyzing core and peripheral circuits’ trade-offs across the entire ADC chain; • Supports the introduced analysis and design concepts by four state-of-the-art silicon prototype ICs, implemented in 28nm bulk CMOS and 16nm FinFET technologies; • Provides a useful reference and a valuable tool for beginners as well as experienced ADC design engineers.

More About Barnes and Noble at Hamilton Place

Barnes & Noble is the world’s largest retail bookseller and a leading retailer of content, digital media and educational products. Our Nook Digital business offers a lineup of NOOK® tablets and e-Readers and an expansive collection of digital reading content through the NOOK Store®. Barnes & Noble’s mission is to operate the best omni-channel specialty retail business in America, helping both our customers and booksellers reach their aspirations, while being a credit to the communities we serve.

2100 Hamilton Pl Blvd, Chattanooga, TN 37421, United States

Find Barnes and Noble at Hamilton Place in Chattanooga, TN

Visit Barnes and Noble at Hamilton Place in Chattanooga, TN
Powered by Adeptmind